O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to .

D G D S G D S D2Pak IRF4905SPbF G D TO-262 IRF4905LPbF S Absolute Maximum Ratings Parameter Gate Drain Max. -.

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of oth.

IRF4905L

IRF4905

IRF4905PbF

IRF4905S

IRF4905SPBF

IRF4000

IRF40B207

IRF40N03

IRF40R207

IRF40SC240

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